512k X 16bit X 2 Banks Synchronous Dram Semiconductor

The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system Clock I/O transactions are possible on every Clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance mem- ory system applications. By Samsung Semiconductor, Inc.
K4S161622D 's PackagesK4S161622D 's pdf datasheet

K4S161622D Pinout, Pinouts
K4S161622D pinout,Pin out
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