1m X 16 Sdram Semiconductor

The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system Clock I/O transactions are possible on every Clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance mem- ory system applications. By Samsung Semiconductor, Inc.
K4S161622E 's PackagesK4S161622E 's pdf datasheet
K4S161622E-TC55 TSOP
K4S161622E-TC60 TSOP
K4S161622E-TC70 TSOP
K4S161622E-TC80 TSOP
K4S161622E-TC10 TSOP




K4S161622E Pinout, Pinouts
K4S161622E pinout,Pin out
This is one package pinout of K4S161622E,If you need more pinouts please download K4S161622E's pdf datasheet.

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K4S161622E Application Notes K4S161622E RoHS K4S161622E Circuits K4S161622E footprint
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