16mb H-die Sdram Specification Semiconductor

The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system Clock I/ O transactions are possible on every Clock cycle. Range of operating frequencies, programmable burst length and programmable laten- cies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. By Samsung Semiconductor, Inc.
K4S161622H 's PackagesK4S161622H 's pdf datasheet
K4S161622H-TC55 TSOP
K4S161622H-TC60 TSOP
K4S161622H-TC70 TSOP
K4S161622H-TC80 TSOP




K4S161622H Pinout, Pinouts
K4S161622H pinout,Pin out
This is one package pinout of K4S161622H,If you need more pinouts please download K4S161622H's pdf datasheet.

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K4S161622H Application Notes K4S161622H RoHS K4S161622H Circuits K4S161622H footprint
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