128mb E-die Sdram Specification Semiconductor

The K4S280432E / K4S280832E / K4S281632E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high perfor- mance CMOS technology. Synchronous design allows precise cycle control with the use of system Clock I/O transactions are possible on every Clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. By Samsung Semiconductor, Inc.
K4S280432E 's PackagesK4S280432E 's pdf datasheet



K4S280432E Pinout, Pinouts
K4S280432E pinout,Pin out
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