512mb B-die Sdram Specification Semiconductor

The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high perfor- mance CMOS technology. Synchronous design allows precise cycle control with the use of system Clock I/O transactions are possible on every Clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. By Samsung Semiconductor, Inc.
K4S510432B 's PackagesK4S510432B 's pdf datasheet

K4S510432B Pinout, Pinouts
K4S510432B pinout,Pin out
This is one package pinout of K4S510432B,If you need more pinouts please download K4S510432B's pdf datasheet.

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