512mb B-die Sdram Specification Semiconductor

The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high perfor- mance CMOS technology. Synchronous design allows precise cycle control with the use of system Clock I/O transactions are possible on every Clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. By Samsung Semiconductor, Inc.
K4S510432B 's PackagesK4S510432B 's pdf datasheet
K4S510832B
K4S511632B




K4S510432B Pinout, Pinouts
K4S510432B pinout,Pin out
This is one package pinout of K4S510432B,If you need more pinouts please download K4S510432B's pdf datasheet.

K4S510432B circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

K4S510432B Pb-Free K4S510432B Cross Reference K4S510432B Schematic K4S510432B Distributor
K4S510432B Application Notes K4S510432B RoHS K4S510432B Circuits K4S510432B footprint
Hot categories