16m X 8bit X 4 Banks Synchronous Dram Lvttl Semiconductor

The K4S510832M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system Clock I/O transactions are possible on every Clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. By Samsung Semiconductor, Inc.
K4S510832M 's PackagesK4S510832M 's pdf datasheet



K4S510832M Pinout, Pinouts
K4S510832M pinout,Pin out
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