Ddp 512mbit Sdram 8m X 16bit X 4 Banks Synchronous Dram Lvttl SemiconductorThe K4S511632D is 536,870,912 bits synchronous high data rate
Dynamic RAM organized as 4 x 8,392,608words by 16bits, fabri-
cated with SAMSUNG's high performance CMOS technology. Syn-
chronous design allows precise cycle control with the use of
system Clock I/O transactions are possible on every Clock cycle.
Range of operating frequencies, programmable burst length and
programmable latencies allow the same device to be useful for a
variety of high bandwidth, high performance memory system appli-
cations. By Samsung Semiconductor, Inc.
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K4S511632D Pb-Free | K4S511632D Cross Reference | K4S511632D Schematic | K4S511632D Distributor |
K4S511632D Application Notes | K4S511632D RoHS | K4S511632D Circuits | K4S511632D footprint |