8m X 16bit X 4 Banks Mobile Sdram Semiconductor

The K4S511633F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system Clock and I/O transactions are possible on every Clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. By Samsung Semiconductor, Inc.
K4S511633F 's PackagesK4S511633F 's pdf datasheet



K4S511633F Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
K4S511633F circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

K4S511633F Pb-Free K4S511633F Cross Reference K4S511633F Schematic K4S511633F Distributor
K4S511633F Application Notes K4S511633F RoHS K4S511633F Circuits K4S511633F footprint
Hot categories