256mb E-die Sdram Specification 54pin Stsop-ii Semiconductor

The K4S560432E / K4S560832E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4bits / 4 x 8,388,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows pre- cise cycle control with the use of system Clock I/O transactions are possible on every Clock cycle. Range of operating frequencies, pro- grammable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. By Samsung Semiconductor, Inc.
K4S560432E 's PackagesK4S560432E 's pdf datasheet



K4S560432E Pinout, Pinouts
K4S560432E pinout,Pin out
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