4m X 16bit X 4 Banks Mobile Sdram In 54boc Semiconductor

The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system Clock and I/O transactions are possible on every Clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. By Samsung Semiconductor, Inc.
K4S56163LF 's PackagesK4S56163LF 's pdf datasheet



K4S56163LF Pinout, Pinouts
K4S56163LF pinout,Pin out
This is one package pinout of K4S56163LF,If you need more pinouts please download K4S56163LF's pdf datasheet.

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