64Mb N-die SDRAM Specification

The K4S640832N / K4S641632N is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system Clock I/O transactions are possible on every Clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high perfor- mance memory system applications. By Samsung Semiconductor, Inc.
K4S641632N 's PackagesK4S641632N 's pdf datasheet

K4S641632N Pinout, Pinouts
K4S641632N pinout,Pin out
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