1m X 16bit X 4 Banks Mobile Sdram In 54fbga Semiconductor

The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system Clock and I/O transactions are possible on every Clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high per- formance memory system applications. By Samsung Semiconductor, Inc.
K4S641633H-RC 's PackagesK4S641633H-RC 's pdf datasheet

K4S641633H-RC Pinout, Pinouts
K4S641633H-RC pinout,Pin out
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