Mobile-sdram Semiconductor

The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system Clock and I/O transactions are possible on every Clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high per- formance memory system applications. By Samsung Semiconductor, Inc.
K4S643233H 's PackagesK4S643233H 's pdf datasheet



K4S643233H Pinout, Pinouts
K4S643233H pinout,Pin out
This is one package pinout of K4S643233H,If you need more pinouts please download K4S643233H's pdf datasheet.

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K4S643233H Application Notes K4S643233H RoHS K4S643233H Circuits K4S643233H footprint
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