1gb A-die Ddr2 Sdram Specification Semiconductor

1gb A-die Ddr2 SDRAM Specification Semiconductor K4T1G044QA The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double- data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination. By Samsung Semiconductor, Inc.
K4T1G044QA 's PackagesK4T1G044QA 's pdf datasheet
K4T1G044QA-ZCE6
K4T1G044QA-ZCD5
K4T1G044QA-ZCCC
K4T1G084QA-ZCE6
K4T1G084QA-ZCD5
K4T1G084QA-ZCCC
K4T1G164QA-ZCE6
K4T1G164QA-ZCD5
K4T1G164QA-ZCCC




K4T1G044QA Pinout, Pinouts
K4T1G044QA pinout,Pin out
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