512Mb E-die DDR2 SDRAM Specification

The 512Mb DDR2 SDRAM K4T51043QE K4T51083QE K4T51163QE is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double- data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination. All of the control and address inputs are synchronized with a pair of externally supplied differential Clocks Inputs are latched at the crosspoint of differential Clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/ CAS multiplexing style. For example, 512Mb(x4) device receive 14/11/2 addressing. By Samsung Semiconductor, Inc.
K4T51043QE 's PackagesK4T51043QE 's pdf datasheet
K4T51043QE-ZCCC FBGA
K4T51043QE-ZCD5 FBGA
K4T51043QE-ZCE6 FBGA
K4T51043QE-ZCE7 FBGA
K4T51043QE-ZCF7 FBGA
K4T51043QE-ZLCC FBGA




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