512Mb E-die DDR2 SDRAM Specification

The 512Mb DDR2 SDRAM K4T51043QE K4T51083QE K4T51163QE is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double- data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination. By Samsung Semiconductor, Inc.
K4T51083QE 's PackagesK4T51083QE 's pdf datasheet
K4T51083QE-W200 FBGA
K4T51083QE-ZCD5 FBGA
K4T51083QE-ZCE6 FBGA
K4T51083QE-ZCE7 FBGA
K4T51083QE-ZCF7 FBGA




K4T51083QE Pinout, Pinouts
K4T51083QE pinout,Pin out
This is one package pinout of K4T51083QE,If you need more pinouts please download K4T51083QE's pdf datasheet.

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K4T51083QE Application Notes K4T51083QE RoHS K4T51083QE Circuits K4T51083QE footprint
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