512Mb G-die DDR2 SDRAM Specification

The 512Mb DDR2 SDRAM K4T51043QG K4T51083QG K4T51163QG is organized as a 32Mbit x 4 I/Os x 4banks or 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double- data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination. By Samsung Semiconductor, Inc.
K4T51163QG 's PackagesK4T51163QG 's pdf datasheet

K4T51163QG Pinout, Pinouts
K4T51163QG pinout,Pin out
This is one package pinout of K4T51163QG,If you need more pinouts please download K4T51163QG's pdf datasheet.

K4T51163QG circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

K4T51163QG Pb-Free K4T51163QG Cross Reference K4T51163QG Schematic K4T51163QG Distributor
K4T51163QG Application Notes K4T51163QG RoHS K4T51163QG Circuits K4T51163QG footprint