256Mb I-die DDR2 SDRAM Specification

The 256Mb DDR2 SDRAM is organized as a 4Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed dou- ble-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination. By Samsung Semiconductor, Inc.
K4T56163QI 's PackagesK4T56163QI 's pdf datasheet
K4T56163QI-ZCD5 FBGA
K4T56163QI-ZCE6 FBGA
K4T56163QI-ZCE7 FBGA
K4T56163QI-ZCF7 FBGA

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K4T56163QI Pinout, Pinouts
K4T56163QI pinout,Pin out
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