64Mx16 Mobile DDR SDRAM

, Double-data-rate architecture; two data transfers per Clock cycle , Bidirectional data strobe(DQS) , Four banks operation , Differential Clock inputs(CK and CK) , MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) , EMRS cycle with address key programs - Partial Array Self Refresh ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 ) , Internal Temperature Compensated Self Refresh , All inputs except data & DM are sampled at the positive going edge of the system clock(CK). , Data I/O transactions on both edges of data strobe, DM for masking. , Edge aligned data output, center aligned data input. , No DLL; CK to DQS is not synchronized. , LMD, UMD for write masking only. By Samsung Semiconductor, Inc.
K4X1G163PC 's PackagesK4X1G163PC 's pdf datasheet

K4X1G163PC Pinout, Pinouts
K4X1G163PC pinout,Pin out
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