8M X32 Mobile DDR SDRAM

8M x32 Mobile DDR SDRAM K4X56323PI ,, Four banks operation , Differential Clock inputs(CK and CK) , MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) , EMRS cycle with address key programs - Partial Array Self Refresh ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 ) , Internal Temperature Compensated Self Refresh , Deep Power Down Mode , All inputs except data & DM are sampled at the positive going edge of the system clock(CK). , Data I/O transactions on both edges of data strobe, DM for masking. , Edge aligned data output, center aligned data input. , No DLL; CK to DQS is not synchronized. By Samsung Semiconductor, Inc.
K4X56323PI 's PackagesK4X56323PI 's pdf datasheet
K4X56323PI-8GC30 FBGA
K4X56323PI-8GC60 FBGA
K4X56323PI-W3000 FBGA
K4X56323PI-WR000 FBGA

K4X56323PI Pinout, Pinouts
K4X56323PI pinout,Pin out
This is one package pinout of K4X56323PI,If you need more pinouts please download K4X56323PI's pdf datasheet.

K4X56323PI circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

K4X56323PI Pb-Free K4X56323PI Cross Reference K4X56323PI Schematic K4X56323PI Distributor
K4X56323PI Application Notes K4X56323PI RoHS K4X56323PI Circuits K4X56323PI footprint
Hot categories