TM 512Mbit XDR DRAM(E-die)

The Timing diagrams in Figure 1 illustrate XDR DRAM device write and read transactions. There are three sets of pins used for normal memory access transactions: CFM/CFMN Clock pins, RQ11..0 request pins, and DQ15..0/DQN15..0 data pins. The N appended to signal name denotes the complementary signal of a differential pair. A transaction is a collection of packets needed to complete a memory access. A packet is a set of bit windows on the signals of a bus. There are two buses that carry packets: the RQ bus and DQ bus. Each packet on the RQ bus uses a set of 2 bit-windows on each signal, while the DQ bus uses a set of 16 bit-windows on each signal. In the write transaction shown in Figure 1, a request packet (on the RQ bus) at Clock edge T contains an activate (ACT) command. This 0 causes row Ra of bank Ba in the memory component to be loaded into the sense amp array for the bank. A second request packet at Clock edge T contains a write (WR) command. This causes the data packet D(a1) at edge T to be written to column Ca1 of the sense 1 4 amp array for bank Ba. A third request packet at Clock edge T contains another write (WR) command. This causes the data packet 3 D(a2) at edge T to also be written to column Ca2. A final request packet at Clock edge T contains a precharge (PRE) command. 6 13 The spacings between the request packets are constrained by the following Timing parameters in the diagram: t , t , and t . In RCD-W CC WRP addition, the spacing between the request packets and data packets is constrained by the t parameter. The spacing of the CFM/ CWD By Samsung Semiconductor, Inc.
K4Y50044UE 's PackagesK4Y50044UE 's pdf datasheet
K4Y50024UE
K4Y50164UE-JCA2
K4Y50164UE-JCB3
K4Y50164UE-JCC4
K4Y50084UE-JCA2
K4Y50084UE-JCB3
K4Y50084UE-JCC4
K4Y50044UE-JCA2
K4Y50044UE-JCB3
K4Y50044UE-JCC4
K4Y50024UE-JCA2
K4Y50024UE-JCB3
K4Y50024UE-JCC4
K4Y50164UE
K4Y50084UE




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