256kx4 Bit (with Oe) High-speed Cmos Static Ram(3.3v Operating). SemiconductorThe K6R1004V1C is a 1,048,576-bit high-speed Static Random
Access Memory organized as 262,144 words by 4 bits. The
K6R1004V1C uses 4 common input and output lines and has
an output enable pin which operates faster than address
access time at read cycle. The device is fabricated using SAM-
SUNGs advanced CMOS process and designed for high-
speed circuit technology. It is particularly well suited for use in
high-density high-speed system applications. The
K6R1004V1C is packaged in a 400 mil 32-pin plastic SOJ. By Samsung Semiconductor, Inc.
|
|
K6R1004V1C-C Pb-Free | K6R1004V1C-C Cross Reference | K6R1004V1C-C Schematic | K6R1004V1C-C Distributor |
K6R1004V1C-C Application Notes | K6R1004V1C-C RoHS | K6R1004V1C-C Circuits | K6R1004V1C-C footprint |