256kx4 Bit (with Oe) High-speed Cmos Static Ram(3.3v Operating). Semiconductor

The K6R1004V1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAM- SUNGs advanced CMOS process and designed for high- speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1004V1C is packaged in a 400 mil 32-pin plastic SOJ. By Samsung Semiconductor, Inc.