128kx8 Bit High Speed Static Ram(3.3v Operating), Revolutionary Pin Out. Operated At Commercial And Industrial Temperature Ranges SemiconductorThe K6R1008V1B is a 1,048,576-bit high-speed Static Ran-
dom Access Memory organized as 131,072 words by 8 bits.
The K6R1008V1B uses 8 common input and output lines and
has an output enable pin which operates faster than address
access time at read cycle. The device is fabricated using SAM-
SUNGs advanced CMOS process and designed for high-
speed circuit technology. It is particularly well suited for use in
high-density high-speed system applications. The
K6R1008V1B is packaged in a 400mil 32-pin plastic SOJ or
TSOP2 forward. By Samsung Semiconductor, Inc.
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K6R1008V1B-C Pb-Free | K6R1008V1B-C Cross Reference | K6R1008V1B-C Schematic | K6R1008V1B-C Distributor |
K6R1008V1B-C Application Notes | K6R1008V1B-C RoHS | K6R1008V1B-C Circuits | K6R1008V1B-C footprint |