64kx16 Bit High-speed Cmos Static Ram(3.3v Operating) Operated At Commercial And Industrial Temperature Ranges. Semiconductor

The K6R1008V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008V1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNGs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1008V1D is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. By Samsung Semiconductor, Inc.
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K6R1008V1D Pinout, Pinouts
K6R1008V1D pinout,Pin out
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