64kx16 Bit High-speed Cmos Static Ram(3.3v Operating) Operated At Commercial And Industrial Temperature Ranges. Semiconductor

The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1D uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB). The device is fabricated using SAMSUNGs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1016V1D is packaged in a 400mil 44-pin plastic SOJ or TSOP2 forward or 48-TBGA. By Samsung Semiconductor, Inc.
K6R1016V1D 's PackagesK6R1016V1D 's pdf datasheet



K6R1016V1D Pinout, Pinouts
K6R1016V1D pinout,Pin out
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