128k X 24 Bit High-speed Cmos Static Ram(3.3v Operating) Semiconductor

The K6R3024V1D is a 3,145,728-bit high-speed Static Random Access Memory organized as 131,072 words by 24 bits. The K6R3024V1D uses 24 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R3024V1D is a three megabit static RAM constructed on an multilayer laminate sub- strate using three 3.3V, 128K x 8 static RAMS encapsulated in a Ball Grid Array(BGA). By Samsung Semiconductor, Inc.
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