512K X 8 Bit High-Speed CMOS Static RAM

The K6R4008C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008C1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4008C1D is packaged in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II. By Samsung Semiconductor, Inc.