256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

The K7B803625B and K7B801825B are 9,437,184-bit Synchro- nous Static Random Access Memory designed for high perfor- mance second level cache of Pentium and Power PC based System. It is organized as 256K(512K) words of 36(18) bits and inte- grates address and control Registers a 2-bit burst address Counter and added some new functions for high performance cache RAM applications; GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. By Samsung Semiconductor, Inc.
K7B801825B 's PackagesK7B801825B 's pdf datasheet
K7B801825B-PC650 TQFP
K7B801825B-PC750 TQFP
K7B801825B-PI650 TQFP
K7B801825B-QC650 TQFP
K7B801825B-QC750 TQFP
K7B801825B-QI750 TQFP




K7B801825B Pinout, Pinouts
K7B801825B pinout,Pin out
This is one package pinout of K7B801825B,If you need more pinouts please download K7B801825B's pdf datasheet.

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