256M Bit (16M X16) Synchronous Burst , Multi Bank NOR Flash Memory

The K8A5615E featuring single 1.8V power supply is a 256Mbit Synchronous Burst Multi Bank Flash Memory organized as 16Mx16. The memory architecture of the device is designed to divide its memory arrays into 519 blocks with independent hard- ware protection. This block architecture provides highly flexible erase and program capability. The K8A5615E NOR Flash con- sists of sixteen banks. This device is capable of reading data from one bank while programming or erasing in the other bank. Regarding read access time, the K8A5615E provides an 14.5ns burst access time and an 88.5ns initial access time at 54MHz. At 66MHz, the K8A5615E provides an 11ns burst access time and 70ns initial access time. The device performs a program operation in units of 16 bits (Word) and an erase operation in units of a block. Single or multiple blocks CAN be erased. The block erase operation is completed within typically 0.7 sec. The device requires 15mA as program/erase current in the extended temperature ranges. The K8A5615E NOR Flash Memory is created by using Sam- sung's advanced CMOS process technology. By Samsung Semiconductor, Inc.