128M Bit (8M X16) Page Mode / Multi-Bank NOR Flash Memory

The K8P2815UQB featuring single 3.0V power supply, is an 128Mbit NOR-type Flash Memory organized as 8M x16. The memory architecture of the device is designed to divide its memory arrays into 270 blocks with independent hardware pro- tection. This block architecture provides highly flexible erase and program capability. The K8P2815UQB NOR Flash consists of four banks. This device is capable of reading data from one bank while programming or erasing in the other banks. The K8P2815UQB offers fast page access time of 25~30ns with random access time of 60~70ns. The devices fast access times allow high speed Microprocessors to operate without wait states. The device performs a program operation in unit of 16 bits (Word) and erases in units of a block. Single or multiple H, blocks CAN be erased. The block erase operation is completed within typically 0.7 sec. The device requires 15mA as program/ erase current in the commercial and industrial temperature ranges. The K8P2815UQB NOR Flash Memory is created by using Samsung's advanced CMOS process technology. This device is available in 80/64 ball FBGA. The device is compatible with EPROM applications to require high-density and cost-effective non-volatile read/write storage solutions. By Samsung Semiconductor, Inc.
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K8P2815UQB Pinout, Pinouts
K8P2815UQB pinout,Pin out
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