128M Bit (8M X16) Page Mode / Multi-Bank NOR Flash Memory

The K8P2815UQB featuring single 3.0V power supply, is an 128Mbit NOR-type Flash Memory organized as 8M x16. The memory architecture of the device is designed to divide its memory arrays into 270 blocks with independent hardware pro- tection. This block architecture provides highly flexible erase and program capability. The K8P2815UQB NOR Flash consists of four banks. This device is capable of reading data from one bank while programming or erasing in the other banks. The K8P2815UQB offers fast page access time of 25~30ns with random access time of 60~70ns. The devices fast access times allow high speed Microprocessors to operate without wait states. The device performs a program operation in unit of 16 bits (Word) and erases in units of a block. Single or multiple H, blocks CAN be erased. The block erase operation is completed within typically 0.7 sec. The device requires 15mA as program/ erase current in the commercial and industrial temperature ranges. The K8P2815UQB NOR Flash Memory is created by using Samsung's advanced CMOS process technology. This device is available in 80/64 ball FBGA. The device is compatible with EPROM applications to require high-density and cost-effective non-volatile read/write storage solutions. By Samsung Semiconductor, Inc.
K8P2815UQB 's PackagesK8P2815UQB 's pdf datasheet
K8P2815UQB-DI4B0
K8P2815UQB-EI4B0




K8P2815UQB Pinout, Pinouts
K8P2815UQB pinout,Pin out
This is one package pinout of K8P2815UQB,If you need more pinouts please download K8P2815UQB's pdf datasheet.

K8P2815UQB circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

K8P2815UQB Pb-Free K8P2815UQB Cross Reference K8P2815UQB Schematic K8P2815UQB Distributor
K8P2815UQB Application Notes K8P2815UQB RoHS K8P2815UQB Circuits K8P2815UQB footprint
Hot categories