64m X 8 Bit Nand Flash Memory Semiconductor

Offered in 64Mx8bit the K9F1208B0B K9F1208U0B K9F1208R0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation CAN be performed in typical 200s on the 528-byte page and an erase operation CAN be performed in typical 2ms on a 16K-byte block. Data in the page CAN be read out at 50ns K9F1208R0B : 60ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems CAN take advantage of the K9F1208X0Bs extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable appli- cations requiring non-volatility. By Samsung Semiconductor, Inc.
K9F1208B0B 's PackagesK9F1208B0B 's pdf datasheet
K9F1208U0B
K9F1208R0B
K9F1208R0B-G
K9F1208B0B-Y
K9F1208B0B-G
K9F1208U0B-Y
K9F1208U0B-G
K9F1208U0B-V
K9F1208R0B-J
K9F1208B0B-P
K9F1208B0B-J
K9F1208U0B-P
K9F1208U0B-J
K9F1208U0B-F




K9F1208B0B Pinout, Pinouts
K9F1208B0B pinout,Pin out
This is one package pinout of K9F1208B0B,If you need more pinouts please download K9F1208B0B's pdf datasheet.

K9F1208B0B circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

K9F1208B0B Pb-Free K9F1208B0B Cross Reference K9F1208B0B Schematic K9F1208B0B Distributor
K9F1208B0B Application Notes K9F1208B0B RoHS K9F1208B0B Circuits K9F1208B0B footprint
Hot categories