64m X 8 Bit Nand Flash Memory Semiconductor

Offered in 64Mx8bit the K9F1208D0B K9F1208U0B K9F1208Q0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation CAN be performed in typical 200ms on the 528-byte page and an erase operation CAN be performed in typical 2ms on a 16K-byte block. Data in the page CAN be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems CAN take advantage of the K9F1208D0B K9F1208U0B K9F1208Q0B extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208D0B K9F1208U0B K9F1208Q0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. By Samsung Semiconductor, Inc.
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