64m X 8 Bit Nand Flash Memory Semiconductor

The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation CAN be performed in typical 200ms on the 528-byte page and an erase operation CAN be performed in typical 2ms on a 16K-byte block. Data in the page CAN be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems CAN take advantage of the K9F1208U0Ms extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208U0M-YCB0 YIB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requir- ing non-volatility. By Samsung Semiconductor, Inc.
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K9F1208U0M-YCB0 Pinout, Pinouts
K9F1208U0M-YCB0 pinout,Pin out
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