64m X 8 Bit , 32m X 16 Bit Nand Flash Memory Semiconductor

Offered in 64Mx8bit or 32Mx16bit, the K9F1208D0A K9F1208U0A K9F1216D0A K9F1216U0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation CAN be performed in typical 200ms on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation CAN be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page CAN be read out at 50ns cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on- chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems CAN take advantage of the K9F12XXX0As extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F12XXX0A is an optimum solu- tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. By Samsung Semiconductor, Inc.
K9F1216D0A 's PackagesK9F1216D0A 's pdf datasheet

K9F1216D0A Pinout, Pinouts
K9F1216D0A pinout,Pin out
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