128M X 8 Bit NAND Flash Memory

Offered in 128Mx8bit the K9F1G08U0A K9F1G08Q0A is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation CAN be performed in typical 300ms on the 2112-byte page and an erase operation CAN be performed in typical 2ms on a 128K-byte block. Data in the data page CAN be read out at 50ns (30ns, K9F1G08U0A cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin- ing of data. Even the write-intensive systems CAN take advantage of the K9F1G08X0As extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08U0A K9F1G08Q0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. By Samsung Semiconductor, Inc.
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K9F1G08U0A
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K9F1G08Q0A Pinout, Pinouts
K9F1G08Q0A pinout,Pin out
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