128m X 8 Bit / 256m X 8 Bit Nand Flash Memory Semiconductor

Offered in 128Mx8bit the K9F1G08U0A K9F1G08R0A K9K2G08U1A is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation CAN be performed in typical 200s on the 2112-byte page and an erase operation CAN be performed in typical 2ms on a 128K-byte block. Data in the data page CAN be read out at 30ns(50ns with 1.8V device) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems CAN take advantage of the K9F1G08X0As extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08U0A K9F1G08R0A K9K2G08U1A is an optimum solu- tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volat i l i ty. By Samsung Semiconductor, Inc.
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K9F1G08R0A Pinout, Pinouts
K9F1G08R0A pinout,Pin out
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