128m X 8 Bit / 64m X 16 Bit Nand Flash Memory Semiconductor

Offered in 128Mx8bit or 64Mx16bit, the K9F1G08D0M K9F1G16Q0M K9F1G08U0M K9F1G16U0M K9F1G08Q0M K9F1G16D0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost- effective solution for the solid state mass storage market. A program operation CAN be performed in typical 300ms on the 2112- byte(X8 device) or 1056-word(X16 device) page and an erase operation CAN be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page CAN be read out at 50ns(1.8V device : 80ns) cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin- ing of data. Even the write-intensive systems CAN take advantage of the K9F1GXXX0Ms extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. By Samsung Semiconductor, Inc.
K9F1G16Q0M 's PackagesK9F1G16Q0M 's pdf datasheet
K9F1G08D0M
K9F1G08U0M
K9F1G16U0M
K9F1G08Q0M
K9F1G16D0M
K9F1G08Q0M-Y
K9F1G16Q0M-Y
K9F1G08D0M-Y
K9F1G16D0M-Y
K9F1G08U0M-Y
K9F1G16U0M-Y
K9F1G08U0M-V
K9F1G08Q0M-P
K9F1G16Q0M-P
K9F1G08D0M-P
K9F1G16D0M-P
K9F1G08U0M-P
K9F1G16U0M-P




K9F1G16Q0M Pinout, Pinouts
K9F1G16Q0M pinout,Pin out
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