16m X 8 Bit , 8m X 16 Bit Nand Flash Memory Semiconductor

Offered in 16Mx8bit or 8Mx16bit, the K9F2808Q0C K9F2816Q0C K9F2808U0C K9F2808U0C K9F2808U0C K9F2816U0C K9F2816U0C is 128M bit with spare 4M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation CAN be per- formed in typical 200ms on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation CAN be performed in typ- ical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page CAN be read out at 50ns cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all pro- gram and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write- intensive systems CAN take advantage of the K9F28XXX0C s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F28XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. By Samsung Semiconductor, Inc.
K9F2808Q0C-DCB0 's PackagesK9F2808Q0C-DCB0 's pdf datasheet
K9F2808Q0C
K9F2816Q0C
K9F2808U0C
K9F2816U0C
K9F2808Q0C-D
K9F2816Q0C-D
K9F2808U0C-Y
K9F2808U0C-D
K9F2808U0C-V
K9F2816U0C-Y
K9F2816U0C-D
K9F2808U0C-YCB0
K9F2808U0C-DCB0
K9F2816U0C-YCB0




K9F2808Q0C-DCB0 Pinout, Pinouts
K9F2808Q0C-DCB0 pinout,Pin out
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