256M X 8 Bit / 128M X 16 Bit NAND Flash Memory

Offered in 256Mx8bit or 128Mx16bit, the K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost- effective solution for the solid state mass storage market. A program operation CAN be performed in typical 300ms on the 2112- byte(X8 device) or 1056-word(X16 device) page and an erase operation CAN be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page CAN be read out at 50ns(30ns, only X8 device) cycle time per byte or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems CAN take advantage of the K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. By Samsung Semiconductor, Inc.
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K9F2G08Q0M Pinout, Pinouts
K9F2G08Q0M pinout,Pin out
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