4m X 8 Bit Nand Flash Memory Semiconductor

The K9F3208W0A is a 4M(4,194,304)x8bit NAND Flash Mem- ory with a spare 128K(131,072)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 250ms and an erase operation CAN be performed in typi- cal 2ms on an 8K-byte block. Data in the page CAN be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/out- put as well as command inputs. The on-chip write controller automates all program and erase system functions, including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems CAN take advantage of the K9F3208W0A extended reliability of 1,000,000 program/erase cycles by providing ECC(Error Cor- rection Code) with real time mapping-out algorithm. The K9F3208W0A is an optimum solution for large nonvolatile stor- age application such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility. By Samsung Semiconductor, Inc.
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K9F3208W0A-TCB0 's PackagesK9F3208W0A-TCB0 's pdf datasheet
K9F3208W0A-TIB0
K9F3208W0A




K9F3208W0A-TCB0 Pinout, Pinouts
K9F3208W0A-TCB0 pinout,Pin out
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