8m X 8 Bit Bit Nand Flash Memory Semiconductor

The K9F6408U0C K9F6408Q0C is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation pro- grams the 528-byte page in typical 200ms and an erase operation CAN be performed in typical 2ms on an 8K-byte block. Data in the page CAN be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as com- mand inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems CAN take advantage of the K9F6408U0C K9F6408Q0C extended reli- ability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. These algo- rithms have been implemented in many mass storage applications and also the spare 16 bytes of a page combined with the other 512 bytes CAN be utilized by system-level ECC. The K9F6408U0C K9F6408Q0C is an optimum solution for large nonvolatile storage applications such as solid state file storage, digital voice recorder, digital still camera and other portable applications requiring non-volatility. By Samsung Semiconductor, Inc.
K9F6408Q0C 's PackagesK9F6408Q0C 's pdf datasheet
K9F6408U0C
K9F6408Q0C-B
K9F6408U0C-B
K9F6408U0C-T
K9F6408U0C-V




K9F6408Q0C Pinout, Pinouts
K9F6408Q0C pinout,Pin out
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