1m X 8 Bit Nand Flash Memory Semiconductor

The K9F8008W0M is a 1M(1,048,576)x8bit NAND Flash Mem- ory with a spare 32K(32,768)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250ms and an erase operation CAN be performed in typically 2ms on a 4K-byte block. Data in the page CAN be read out at 80ns cycle time per byte. The I/O pins serve as the ports for address and data input/out- put as well as command inputs. The on-chip write controller automates all program and erase system functions, including pulse repetition, where required, and internal verify and margin- ing of data. Even the write-intensive systems CAN take advan- tage of the K9F8008W0M extended reliability of 1,000,000 program/erase cycles by providing either ECC(Error Correction Code) or real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications and also the spare 8bytes of a page combined with the other 256 bytes CAN be utilized by system-level ECC. The K9F8008W0M is an optimum solution for large nonvolatile storage application such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility. By Samsung Semiconductor, Inc.