1m X 8 Bit Nand Flash Memory SemiconductorThe K9F8008W0M is a 1M(1,048,576)x8bit NAND Flash Mem-
ory with a spare 32K(32,768)x8bit. Its NAND cell provides the
most cost-effective solution for the solid state mass storage
market. A program operation programs the 264-byte page in
typically 250ms and an erase operation CAN be performed in
typically 2ms on a 4K-byte block.
Data in the page CAN be read out at 80ns cycle time per byte.
The I/O pins serve as the ports for address and data input/out-
put as well as command inputs. The on-chip write controller
automates all program and erase system functions, including
pulse repetition, where required, and internal verify and margin-
ing of data. Even the write-intensive systems CAN take advan-
tage of the K9F8008W0M extended reliability of 1,000,000
program/erase cycles by providing either ECC(Error Correction
Code) or real time mapping-out algorithm. These algorithms
have been implemented in many mass storage applications
and also the spare 8bytes of a page combined with the other
256 bytes CAN be utilized by system-level ECC.
The K9F8008W0M is an optimum solution for large nonvolatile
storage application such as solid state storage, digital voice
recorder, digital still camera and other portable applications
requiring nonvolatility. By Samsung Semiconductor, Inc.
|
|
K9F8008W0M Pb-Free | K9F8008W0M Cross Reference | K9F8008W0M Schematic | K9F8008W0M Distributor |
K9F8008W0M Application Notes | K9F8008W0M RoHS | K9F8008W0M Circuits | K9F8008W0M footprint |