64m X 8 Bit , 32m X 16 Bit Nand Flash Memory Semiconductor

Offered in 64Mx8bit or 32Mx16bit, the K9K1216D0C K9K1216U0C K9K1208D0C K9K1208U0C K9K1208Q0C K9K1216Q0C is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation CAN be performed in typical 200s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation CAN be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page CAN be read out at 50ns K9K1216Q0C : 60ns) cycle time per byte (X8 device) or word(X16 device). The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems CAN take advantage of the K9K1216D0C K9K1216U0C K9K1208D0C K9K1208U0C K9K1208Q0C K9K1216Q0C extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K1216D0C K9K1216U0C K9K1208D0C K9K1208U0C K9K1208Q0C K9K1216Q0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. By Samsung Semiconductor, Inc.
K9K1216D0C 's PackagesK9K1216D0C 's pdf datasheet
K9K1216U0C
K9K1208D0C
K9K1208U0C
K9K1208Q0C
K9K1216Q0C
K9K1208Q0C-G
K9K1216Q0C-G
K9K1208D0C-G
K9K1216D0C-G
K9K1208U0C-G
K9K1216U0C-G
K9K1208Q0C-J
K9K1216Q0C-J
K9K1208D0C-J
K9K1216D0C-J
K9K1208U0C-J
K9K1216U0C-J




K9K1216D0C Pinout, Pinouts
K9K1216D0C pinout,Pin out
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