128m X 8 Bit Nand Flash Memory Semiconductor

The K9K1G08U0B K9K1G08R0B K9K1G08B0B is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation CAN be performed in typically 200s on the 528-byte page and an erase operation CAN be performed in typically 2ms on a 16K-byte block. Data in the data Register CAN be read out at 50ns(1.8V device : 60ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems CAN take advantage of the K9K1G08U0B K9K1G08R0B K9K1G08B0B extended reli- ability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K1G08U0B K9K1G08R0B K9K1G08B0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. By Samsung Semiconductor, Inc.
K9K1G08B0B 's PackagesK9K1G08B0B 's pdf datasheet
K9K1G08R0B-G
K9K1G08B0B-G
K9K1G08R0B-J
K9K1G08B0B-J
K9K1G08U0B-J
K9K1G08U0B-G
K9K1G08U0B
K9K1G08R0B




K9K1G08B0B Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
K9K1G08B0B circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

K9K1G08B0B Pb-Free K9K1G08B0B Cross Reference K9K1G08B0B Schematic K9K1G08B0B Distributor
K9K1G08B0B Application Notes K9K1G08B0B RoHS K9K1G08B0B Circuits K9K1G08B0B footprint