128m X 8 Bit / 64m X 16 Bit Nand Flash Memory Semiconductor

The K9K1G08U0A is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation CAN be performed in typically 200ms on the 528-byte(x8 device) or 264-word(x16 device) page and an erase operation CAN be performed in typically 2ms on a 16K-byte(x8 device) or 8K-word(x16 device) block. Data in the data Register CAN be read out at 50ns(1.8V device : 60ns) cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on- chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and mar- gining of data. Even the write-intensive systems CAN take advantage of the K9K1G08U0As extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K1G08U0A is an optimum solu- tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. By Samsung Semiconductor, Inc.
K9K1G08Q0A 's PackagesK9K1G08Q0A 's pdf datasheet
K9K1G08U0A
K9K1G16U0A
K9K1G16Q0A
K9K1G08Q0A-G
K9K1G16Q0A-G
K9K1G08U0A-Y
K9K1G08U0A-G
K9K1G08U0A-V
K9K1G16U0A-Y
K9K1G16U0A-G
K9K1G08Q0A-J
K9K1G16Q0A-J
K9K1G08U0A-P
K9K1G08U0A-J
K9K1G08U0A-F
K9K1G16U0A-P
K9K1G16U0A-J




K9K1G08Q0A Pinout, Pinouts
K9K1G08Q0A pinout,Pin out
This is one package pinout of K9K1G08Q0A,If you need more pinouts please download K9K1G08Q0A's pdf datasheet.

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