256m X 8 Bit / 128m X 16 Bit Nand Flash Memory Semiconductor

Offered in 256Mx8bit or 128Mx16bit, the K9W4G08U1M K9W4G16U1M K9K2G08U0M K9K2G16Q0M K9K2G08Q0M K9K2G16U0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost- effective solution for the solid state mass storage market. A program operation CAN be performed in typical 300ms on the 2112- byte(X8 device) or 1056-word(X16 device) page and an erase operation CAN be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page CAN be read out at 80ns(1.8V device) or 50ns(3.3V device) cycle time per byte(X8 device) or word(X16 device). The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verifi- cation and margining of data. Even the write-intensive systems CAN take advantage of the K9W4G08U1M K9W4G16U1M K9K2G08U0M K9K2G16Q0M K9K2G08Q0M K9K2G16U0M extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9W4G08U1M K9W4G16U1M K9K2G08U0M K9K2G16Q0M K9K2G08Q0M K9K2G16U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 2Gb stacked with two chip selects is also available in standard TSOPI pack- age. By Samsung Semiconductor, Inc.
K9K2G08Q0M 's PackagesK9K2G08Q0M 's pdf datasheet
K9W4G08U1M
K9W4G16U1M
K9K2G08U0M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M-Y
K9K2G16Q0M-Y
K9XXG08UXM-Y
K9XXG16UXM-Y
K9K2G08U0M-V




K9K2G08Q0M Pinout, Pinouts
K9K2G08Q0M pinout,Pin out
This is one package pinout of K9K2G08Q0M,If you need more pinouts please download K9K2G08Q0M's pdf datasheet.

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