256M X 8 Bit NAND Flash Memory

256M x 8 Bit NAND Flash Memory ,Offered in 256Mx8bit the K9K2G08R0A K9K2G08U0A is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation CAN be performed in typical 300s on the 2112byte page and an erase operation CAN be performed in typical 2ms on a 128K-byte block. Data in the data page CAN be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems CAN take advantage of the K9K2G08R0A K9K2G08U0A s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K2G08R0A K9K2G08U0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. By Samsung Semiconductor, Inc.
K9K2G08U0A 's PackagesK9K2G08U0A 's pdf datasheet
K9K2G08R0A
K9K2G08U0A-F
K9K2G08X0A-J




K9K2G08U0A Pinout, Pinouts
K9K2G08U0A pinout,Pin out
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