512m X 8 Bits / 1g X 8 Bits Nand Flash Memory

Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most cost- effective solution for the solid state application market. A program operation CAN be performed in typical 200s on the (2K+64)Byte page and an erase operation CAN be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data page CAN be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems CAN take advantage of the K9F4G08U0Ms extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F4G08U0M is an optimum solu- tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volat i l i ty. By Samsung Semiconductor, Inc.
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K9F4G08U0M




K9K8G08U1M Pinout, Pinouts
K9K8G08U1M pinout,Pin out
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