512M X 8 Bit / 1G X 8 Bit NAND Flash Memory

Offered in 512Mx8bit, the K9G4G08U0A K9G4G08B0A K9L8G08U1A is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation CAN be per- formed in typical 800s on the 2,112-byte page and an erase operation CAN be performed in typical 1.5ms on a (256K+8K)byte block. Data in the data Register CAN be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/out- put as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems CAN take advantage of the K9G4G08U0A K9G4G08B0A K9L8G08U1A extended reliability of 5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9G4G08U0A K9G4G08B0A K9L8G08U1A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. By Samsung Semiconductor, Inc.
K9L8G08U1A 's PackagesK9L8G08U1A 's pdf datasheet
K9G4G08U0A
K9G4G08U0A-P
K9G4G08U0A-I




K9L8G08U1A Pinout, Pinouts
K9L8G08U1A pinout,Pin out
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