128m X 8 Bits Nand Flash Memory Semiconductor

Offered in 128Mx8bits, the K9T1G08U0M is 1Gbit with spare 32Mbit capacity. The device is offered in 3.3V Vcc. Its NAND cell pro- vides the most cost-effective solutIon for the solid state mass storage market. A program operation CAN be performed in typical 200s on the 528-bytes and an erase operation CAN be performed in typical 2ms on a 16K-bytes block. Data in the page CAN be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and mar- gining of data. Even the write-intensive systems CAN take advantage of the K9T1G08U0Ms extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9T1G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. By Samsung Semiconductor, Inc.